Dislocation related band-edge photoluminescence in boron-implanted silicon

摘要

Preliminary findings from a photoluminescence (PL) study of 30 keV boron implanted and furnace annealed silicon are presented. When different laser excitation wavelengths were used: namely, 1064 nm, and 532 nm; the observed PL emission yield changed substantially. Since the excitation volumes of these two wavelengths are significantly different in silicon due to sample absorption, they provide a means of probing defect related luminescence as a function of the excitation depth. An additional advantage of using the 1064 nm excitation is the inclusion of the phononic silicon (Raman) band which overlaps with the PL spectrum allowing it to be used as a scattering quantum counter. This provides a means of normalising the luminescence yield for samples prepared under different conditions.