The Mathematical Modeling of the MOS-transistors Fabrication Technique in Modern TCAD-systems

摘要

Simulation of the MOS-transistors fabrication technique using TCAD (Technology Computer Aided Design) DIOS and TCAD Sentaurus Process the most perspective TCAD-systems from Synopsys company at present was carried out in this work. Special attention was given to research of offered diffusion models and capabilities of the mesh generation algorithm, as these factors have direct influence on final result of modeling and a total time of calculation. In addition, the obtained results were compared with similar calculations of this structure in "FACT" and MicroTec-3.02 software packages.