Monte Carlo Simulation of Phase Separation in SiO{sub}x Layers

机译：SiO {Sub} X层中相分离的蒙特卡罗模拟

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Results of Monte Carlo simulation of SiO{sub}x (0 ≤ x ≤1) layers annealing are presented. After annealing SiO{sub}x layers exhibit a tendency to pore formation. These pores separate fragments of well-ordered stochiometric dioxide matrix and silicon phase. Excess silicon precipitates in the pores in nanocrystal form.

机译：介绍了SiO {Sub} x（0≤x≤1）层退火的蒙特卡罗模拟结果。退火后SiO {亚} X层表现出孔隙形成的趋势。这些孔隙分开良好有序的四胞二氧化二氧化氧化物基质和硅相的片段。过量的硅沉淀在纳米晶体中的孔中。

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《International Workshop and Tutorials on Electron Devices Materials》|2008年||共3页
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Ivan V. Mzhelskiy; Nataliya L. Shwartz; Zoya Sh. Yanovitskaja;
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原文格式 PDF
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中图分类 TN6-53;
关键词
Simulation; Monte Carlo; SiO{sub}x layers; Nanocrystals;

机译：模拟;蒙特卡洛;SIO {亚} X层;纳米晶体;

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Monte Carlo Simulation of Phase Separation in SiO{sub}x Layers

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