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Design and implementation of silicon-based optical nanostructures for integrated photonic circuit applications using Deep Reactive Ion Etching (DRIE) technique

机译:基于硅基光学纳米结构的设计与实现,用于使用深反应离子蚀刻(DRIE)技术的集成光子电路应用

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In this paper, we present the fabrication of nano optical elements by means of deep reactive ion etching technique (Bosch process) on a silicon-on-insulator substrate, The nano structures are fabricated in a two step process The fust step consists of direct-writing nanoscale patterns on PMMA polymer by electron beam lithography. These nano patterns are then transferred to the silicon surface by a low temperature and low pressure deep reactive ion etching (DRIE) process using PMMA as a mask. The low temperature and low pressure conditions in the DRIE process minimize scalloping in the nanoscale features, We found that the etch rate is highly dependent on the aspect ratio of the structure. We have used the DRIE method to fabricate a negative-index photonic crystal flat lens and demonstrated the focusing properties of this flat lens using a near-field scanning optical microscope.
机译:在本文中,我们在绝缘体上的深反应离子蚀刻技术(博世工艺)上介绍了纳米光学元件的制造,纳米结构在两个步骤过程中制造了速度步骤由直接构成 - 通过电子束光刻在PMMA聚合物上写纳米级图案。然后,使用PMMA作为掩模,通过低温和低压深反应离子蚀刻(DRIE)工艺将这些纳米图案转移到硅表面上。 DRIE过程中的低温和低压条件使纳米级特征中的扇形最小化,我们发现蚀刻速率高度依赖于结构的纵横比。我们使用了DRIE方法来制造负指数光子晶体平透镜,并使用近场扫描光学显微镜展示该平透镜的聚焦性能。

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