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A Robust CMOS RF Front-end Design for 3.1-4.8GHz MB-OFDM UWB System

机译:适用于3.1-4.8GHz MB-OFDM UWB系统的强大CMOS RF前端设计

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This paper presents a robust RF front-end for 3.1-4.8-GHz direct-conversion Ultra-wideband (UWB) applications such as the MB-OFDM UWB. The circuits contain a gain controllable low-noise amplifier (LNA) with resistive feedback, a merged quadrature mixer with static current injection, and local oscillator (LO) buffers. Post-layout simulations show that the fully differential front-end achieves a maximum conversion gain of 25.5dB and a minimum of 16.5dB, an input return loss of better than -8dB, a minimum noise figure of 4.5dB in high-gain mode and an input referred 3rd intercept point (IIP3) of -4.3dBm in low-gain mode while drawing 26.3mA current from a 1.8-V supply without the buffers. The ESD protected chip is implemented in a 0.18-μm CMOS technology with an active area of 0.48mm~2.
机译:本文介绍了3.1-4.8 -GHz直接转换超宽带(UWB)应用的强大RF前端,如MB-OFDM UWB。电路包含具有电阻反馈的增益可控低噪声放大器(LNA),具有静态电流注入的合并正交混频器和本地振荡器(LO)缓冲器。后布局模拟表明,全差分前端达到25.5dB的最大转换增益,最小值为16.5dB,输入返回损耗优于-8dB,高增益模式下的最小噪声系数为4.5dB,在低增益模式下,输入的第3次截取点(IIP3)为-4.3dBm,在没有缓冲器的1.8-V电源中绘制26.3mA电流。 ESD保护芯片以0.18-μm的CMOS技术实现,有效面积为0.48mm〜2。

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