Passivation of organic light emitting diodes with Al_2O_3/Ag/Al_2O_3 multilayer thin films grown by twin target sputtering system

摘要

The characteristics of Al_2O_3/Ag/Al_2O_3 multilayer passivaton prepared by twin target sputtering (TTS) system for organic light emitting diodes. The Al_2O_3/Ag/Al_2O_3 multilayer thin film passivation on a PET substrate had a high transmittance of 86.44 % and low water vapor transmission rate (WVTR) of 0.011 g/m~2 -day due to the surface plasmon resonance (SPR) effect of Ag interlayer and effective multilayer structure for preventing the intrusion of water vapor. Using synchrotron x-ray scattering and field emission scanning electron microscope (FESEM) examinations, we investigated the growth behavior of Ag layer on the Al_2O_3 layer to explain the SPR effect of the Ag layer. This indicates that an Al_2O_3/Ag/Al_2O_3 multilayer passivation is a promising thin film passivation scheme for organic based flexible optoelectronics.