Pseudo-linear Automatic Gain Control system based on Nanoscale Field Effect Diode and SOI-MOSFET

摘要

The use of Field Effect Diode (FED) together with double gate (DG) silicon on insulator (SOI) MOSFET for implementing Variable Gain Amplifier (VGA) in Automatic Gain Control (AGC) systems are investigated in this paper. These VGA circuits show better characteristics in terms of power and bandwidth compared with MOSFET-VGA. Using the FED and DG SOI-MOSFET devices, leads to more flexibility in terms of better gain control, performance improvement, and power consumption reduction.