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Preparation and Characterization of Pt/WO_3 Nano-film and its Hydrogen-sensing Properties

机译:Pt / WO_3纳米膜的制备与表征及其氢气传感性能

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Tungsten trioxide is an n-type semiconductor, which has been extensively used for the development of metal oxide semiconductor gas sensors. The hydrogen gas sensing performance of platinum (Pt) catalyst activated WO_3 thin films were investigated here. All of the Pt/WO_3 films membranes are sensitive to hydrogen gas and the sample by sol-gel and DC reactive magnetron sputtering methods. X-ray diffraction results indicate that the tungsten trioxide is cubic crystal, and the AFM analysis shows molecular structures of the samples are tetrahedron. It means the four consecutive quadrilateral forms we observed in the 9nm×9nm molecular structure are scattergram of tungsten-ions and oxide-ions on 106 sides in WO_(2.9) structure cell, and the lost one oxide- ion resulted in the transition of WO_3to WO_(2.9). With anneal temperature rising, the membranous poriness decreasing. The higher crystal degree is, the lower gasochromic efficiency is. The change of combining environment and content of O~(-2) ions in colorized / decolorized state WO_x films was observed in XPS analysis of Pt/WO_3 film, the peak shape had changed greatly. As a result, the explanation to this phenomenon is available here according to XPS chemical shift of electric potential model theory.
机译:钨三氧化物是N型半导体,已广泛用于开发金属氧化物半导体气体传感器。研究了铂(PT)催化剂活化WO_3薄膜的氢气传感性能。所有Pt / WO_3膜膜对氢气和样品通过溶胶 - 凝胶和DC反应磁控溅射方法敏感。 X射线衍射结果表明钨三氧化钨是立方晶体,AFM分析表明样品的分子结构是四面体。这意味着在9nm×9nm分子结构中观察到的四种连续四边形形式是钨 - 离子和氧化物离子的散点图,在WO_(2.9)结构细胞中106侧,并且丢失的一氧化物导致WO_3的过渡wo_(2.9)。随着退火温度上升,膜状型趋势降低。较高的晶度是,较低的加压效率是。在Pt / WO_3薄膜的XPS分析中观察到色调/脱色状态下的o〜(-2)离子的组合环境和含量的变化,峰值形状大大变化。结果,根据电势模型理论的XPS化学转移,在此提供对这种现象的说明。

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