INVESTIGATION OF LASER RADIATION DYNAMICS IN SEMICONDUCTORS DUE TO PICOSECOND ELECTRON BEAMS AND ELECTRIC FIELD PULSES

摘要

In our previous research [1] laser generation peculiarities in different semiconductor A2B6 materials (CdS, ZnSe, ZnCdS) under the action of high-current picosecond electron beams were investigated. Laser radiation is observed in the specified materials due to electric field as well. Radiation appears with apply of a high-voltage pulses (voltage to 200 kV, duration ～ 150-300 ps) on the sample and has threshold character. It is revealed that generation areas are localized near the sample surface, and radiation duration is from 60 to 100 ps. Radiation power, in case of electric field pulses excitation, could exceed 10 kW.