Growth, luminescence and photoacoustic characterization of Zn1#x2212;x#x2212;yBexMnySe crystals for optoelectronic applications

摘要

Zn1−x−yBexMnySe solid solution is a very interesting semiconductor because it is promising material for future application in spintronics as a spin filter layer as well as in memory technology. The energy gap of BeSe is larger that that of ZnSe while the lattice constant of BeSe is lower than that of ZnSe. Both of them crystallize in sphalerite structure. By changing the content of beryllium it is possible to obtain material with different energy gap and lattice constant, matched to different substrates. For construction of optoelectronic devices the multilayer structures are commonly used. In such technology knowing of optical and thermal properties of layer component materials is very important. This work deals with photoacoustic and photoluminescence studies of bulk Zn1−x−yBexMnySe mixed crystals.