New materials with prescribed isotopic composition could open good possibilities of functional characteristics needed for the progress in science and technology. [1]. It have been shown, that the thermal conductivity of the monocrystallic ~(70)Ge (99,99 percent) at 15 K was as much as 8.1 higher than the corresponding parameter of the natural isotopic structure [2]. Applications of the single isotopes compositions are restricted by their high cost. That's why it is very promising to find out new and less expensive methods of isotope separation and characterization of new materials [1]. One of the most perspective isotopes separation methods is by laser irradiation, combining the selective electromagnetic excitation of the chosen isotopic molecule and chemical processes as photo induced reactions, adsorption, phase transitions and others. Our earlier research [3] paved the way to the development of new laser technological processes of isotopes separation. In this paper we exploit the possibility of isotopes separation by photo-catalytic reaction on the surface of semiconductor nanocrystals.
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