Ultra-Thin Single- and Double-Gate MOSFETs for Future ULSI Applications:Measurements, Simulations, and Open Issues

摘要

CMOS technology represents the backbone of today's semiconductor industry andthe enabler for the implementation of complex systems on single chips. The ITRSRoadmap is clearly pushing CMOS technology toward its limits to fulfillextremely demanding requirements even for near-term products.' The scaling ofthe MOS transistor to physical channel lengths below 70 nm is projected to occurby the years 2004-2005, despite the fact that the shrinkage of the bulk MOSFETto this gate-length range presents some issues that have no known solutions.'