Further development of electron tomography

摘要

Both process characterization and development in high performance semiconductor industry require transmission electron microscopy analysis. Due to the shrinkage in feature size, two-dimensional images are more insufficient. Semiconductor components become smaller than the thickness of a lamella. If different features overlap, it will be impossible to resolve them. Moreover, it is not achievable to study the complex threedimensional geometry of an object in a two-dimensional projection.