Simulation of Ga Ion Induced Amorphization in Si during FIB using TRIDYN simulation

摘要

n this study, we have employed TRIDYN as a simulation tool to determine the amorphous layer thickness for several FIB conditions, assuming that silicon has an amorphization threshold of 5 A atom displacement and that BCA is valid for > 5 A atom displacement. Preliminary comparison to experimental literature data shows that the simulation data is trustworthy [10-12].