The degradation of reading performance in SONOS Flash Memory with small threshold voltage window

摘要

In this paper, the threshold current was presented as a referential current of the bit-line to characterize the degradation of reading performances in SONOS flash memory with small threshold voltage window. The threshold current did not need any additional measurements, its feasibility was validated by both experiments and calculations, and it was more sensitive to the degradation of reading performances than the threshold voltage. And the degradation of reading performances was related to the generated interface traps.