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Effect of dipole layer of Alq3 and metal on organic electroluminescence

机译:偶极层和金属偶极层对有机电致发光的影响

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The effect of dipole layer of Alq3 and metal on organic electroluminescence in organic light-emitting diodes (OLEDs) was discussed. The relations among energy level alignment, interface charge transfer and dipole layer formation were well analyzed. An interface dipole layer and charge transfer were observed by XPS and UPS. As for Alq3 with metallic film such as Al and Mg, N 1s, O 1s and C 1s all move to low binding energy. Both Alq3/Al and Alq3/Mg have different electron spectrum from that of simple Alq3 film. It is really the reason of the interface energy change that the metal atoms located near the interface move to organic layer and then chemically interact with O and C of Alq3. The injection voltage barrier heights of electrons at Alq3/Al and Alq3/Mg interface are 0.1eV and 0.2eV, respectively. Charge transfer lowers electrons injection voltage barrier height and forms good electrons injection interfaces. The width of dipole layer is about 5nm. The knowledge of such interface dipole layer is essential for a proper understanding of the physical processes at the metal/organic interface.
机译:讨论了Alq3和金属偶极层对有机发光二极管(OLED)有机电致发光的影响。分析了能量水平对准,界面电荷转移和偶极层形成的关系。 XPS和UPS观察到接口偶极层和电荷转移。对于诸如Al和Mg,N 1S,O 1S和C 1s的金属膜,均移动到低结合能量。 Alq3 / Al和Alq3 / mg均具有不同的电子光谱,来自简单的Alq3薄膜。它真的是界面能量变化的原因,即位于界面附近的金属原子移动到有机层,然后与Alq3的O和C化学相互作用。 Alq3 / Al和Alq3 / Mg界面处的电子的注射电压屏障高度分别为0.1ev和0.2ev。电荷转移降低电子注入电压屏障高度,并形成良好的电子注入接口。偶极层的宽度约为5nm。这种界面偶极层的知识​​对于正确理解金属/有机界面处的物理过程至关重要。

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