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Study on Dy2O3-Doped Medium Temperature Sintering (Ba, Sr) TiO3 Series Capacitor Ceramics

机译:DY2O3掺杂介质烧结(BA,SR)TiO3系列电容器陶瓷研究

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The influence of Dy2O3 doping on the properties of medium temperature sintering (Ba, Sr)TiO3 series capacitor ceramics was studied by single factor various amount method, and the law of the influence on the medium temperature sintering (Ba, Sr)TiO3 series capacitor ceramics was obtained. The dielectric materials used for multilayer ceramic capacitor was obtained, of which the dielectric constant was 1375, the dielectric loss was 0.0060, the density was 5.92 g·cm-3,the sintering temperature was less than 1150 °C, the capacitance temperature changing rate (△C/C) was less than ± 15%, the voltage withstand strength was more than 9.3 kV·mm-1, and the crystal grain size was about 1 μm. The surface morphology of the sample doped with various amount Dy2O3 was analyzed by scanning electron microscope (SEM).The results showed that doping Dy2O3 could form defect solid solution, stop grain growth, fine crystal grain, widen curie peak, obtaining high dielectric constant and low dielectric loss, capacitance temperature property was suited for X7R character, in the (Ba, Sr)TiO3 series ceramics. At the same time, the voltage withstand strength was enhanced greatly.
机译:通过单一因素各种方法研究DY2O3掺杂对中温烧结(BA,SR)TiO3串联电容器陶瓷的性能的影响,以及对中温烧结(BA,SR)TiO3系列电容器陶瓷的影响获得了。得到用于多层陶瓷电容器的介电材料,其中介电常数为1375,介电损耗为0.0060,密度为5.92g·cm-3,烧结温度小于1150℃,电容温度变化率小于1150℃ (△C/ c)小于±15%,电压耐高强度大于9.3kV·mm-1,晶粒尺寸约为1μm。通过扫描电子显微镜(SEM)分析掺杂有各种量DY2O3的样品的表面形态。结果表明,掺杂DY2O3可以形成缺陷固溶体,止动晶粒生长,细晶粒,宽带居里峰,获得高介电常数和低介电损耗,电容温度特性适用于X7R特性,在(BA,SR)TiO3系列陶瓷中。与此同时,电压耐高力提高了大大提高。

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