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Design of Voltage Control Oscillator for 5.2GHz in 0.35驴m SiGe BiCMOS Technology

机译：5.2GHz的电压控制振荡器设计在0.35米SiGe BICMOS技术中的5.2GHz

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This paper presents the design and the exploratory measurements of a fully integrated VCO for 5.2 GHz applications. The presented circuit is implemented in 0.35 mum SiGe BiCMOS technology from TSMC. The current drawn from 2.5 V is 19mA for the VCO. It has

机译：本文介绍了5.2 GHz应用程序完全集成VCO的设计和探索性测量。呈现的电路以TSMC为0.35毫米SiGe Bicmos技术实现。从2.5 V绘制的电流为VCO为19mA。它有

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《IEEE Conference on ELectron Devices and Solid-State Circuits 》|2007年||共3页
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作者
Wen-Shan Chen; Hsin-Yen Hsieh; Chi-Huang Lin;
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原文格式 PDF
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中图分类 TN43-53;
关键词
BiCMOS integrated circuits; Ge-Si alloys; integrated circuit design; integrated circuit measurement; microwave integrated circuits; microwave oscillators; voltage-controlled oscillators; BiCMOS technology; SiGe; TSMC; VCO design; current 19 mA; frequency 5.2 GHz; pha;

机译：BICMOS集成电路;GE-SI合金;集成电路设计;集成电路测量;微波集成电路;微波振荡器;电压控制振荡器;BICMOS技术;SIGE;TSMC;TSMC;VCO设计;频率为19 mA;频率5.2 GHz;

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1. 0.35μm SiGe BiCMOS 10 Gb/s激光驱动芯片设计 [J] . 吴松昌, 冯军, 章丽, 东南大学学报（英文版） . 2009 ,第003期
2. Design of a tunable multi-band differential LC VCO using 0.35 μm SiGe BiCMOS technology for multi-standard wireless communication systems [J] . Ahmet Kemal Bakkaloglu, Arzu Ergintav, Emre Ozeren, Microelectronics journal . 2009 ,第6期

机译：使用0.35μmSiGe BiCMOS技术的可调谐多频带差分LC VCO的设计，用于多标准无线通信系统
3. Design and Properties of Phototransistor Photodetector in Standard 0.35- $mu$m SiGe BiCMOS Technology [J] . Lai K.-S., Huang J.-C., Hsu K. Y.-J. IEEE Transactions on Electron Devices . 2008 ,第3期

机译：标准0.35-μmSiGe BiCMOS技术中的光电晶体管光电探测器的设计和性能
4. Design of a 4.2-5.4 GHz Differential LC VCO Using 0.35 μm SiGe BiCMOS Technology for IEEE 802.11a Applications [J] . Onur Esame, Ibrahim Tekin, Ayhan Bozkurt, International journal of RF and microwave computer-aided engineering . 2007 ,第2期

机译：使用0.35μmSiGe BiCMOS技术针对IEEE 802.11a应用设计4.2-5.4 GHz差分LC VCO
5. Design of Voltage Control Oscillator for 5.2GHz in 0.35驴m SiGe BiCMOS Technology [C] . Wen-Shan Chen, Hsin-Yen Hsieh, Chi-Huang Lin Electron Devices and Solid- State Circuits, 2007 IEEE Conference on . 2007

机译：0.35驴m SiGe BiCMOS技术中5.2GHz电压控制振荡器的设计
6. The design of a high-frequency voltage-controlled oscillator in BiCMOS using on-chip inductors. [D] . Maguire, Matthew K. 1995

机译：利用片上电感器设计BiCMOS中的高频压控振荡器。
7. Switched-Biasing Techniques for CMOS Voltage-Controlled Oscillator [O] . Cheol-Woo Kang, Hyunwon Moon, Jong-Ryul Yang 2021

机译：CMOS电压控制振荡器的开关偏置技术
8. W-band voltage-controlled oscillator design in 130 nm SiGe BiCMOS technology [O] . Alexander Kozhemyakin, Ivan Kravchenko 2019

机译：130 NM SiGe BICMOS技术的W波段电压控制振荡器设计

Design of Voltage Control Oscillator for 5.2GHz in 0.35驴m SiGe BiCMOS Technology

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