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Preparation and Property of Textured and Epitaxial PZT Films on Different Substrates

机译:不同底物上纹理和外延PZT薄膜的制备及性能

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Textured and epitaxial Pb(ZrxTi1-x)O3 (PZT) films with Zr/Ti ratio of 53/47 were deposited on different substrates by sol-gel method.It was found that PZT films deposited on Pt(111)/Ti/SiO2/Si(100)substrates using an oxide seeding layer (lead oxide or titanium dioxide) resulted in highly textured orientations,while epitaxial PZT films were obtained on differently-oriented Nb-doped SrTiO3 (Nb:STO)single-crystal wafers.The difference of orientation and phase structure for textured and epitaxial PZT films were discussed,and the relationships for ferroelectric and piezoeletric properties with preferential orientations were evaluated.Higher remanent polarization and piezoelectric constant were obtained in epitaxial PZT films on Nb:STO than in textured PZT films on platinized silicon.The intrinsic and extrinsic contributions to high piezoelectric response of epitaxial PZT films were also discussed.
机译:具有Zr / Ti比例为53/47的纹理和外延Pb(ZrxTi1-x)O3(PZT)膜沉积在不同的底物上,通过溶胶 - 凝胶法沉积在不同的底物上。发现Ptt薄膜沉积在Pt(111)/ Ti / SiO2上/ Si(100)使用氧化物播种层(二氧化钛或二氧化钛)导致高度纹理的取向,而外延PZT薄膜在不同取向的Nb掺杂的SRTIO3(Nb:STO)单晶晶片上获得。差异讨论了纹理和外延PZT膜的取向和相位结构,并评估了优先取向的铁电和压电性能的关系。在Nb上的外延PZT薄膜中获得了更加偏移和压电常数,而不是纹理的PZT薄膜铂化硅。还讨论了外延PZT薄膜的高压电反应的内在和外在贡献。

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