首页> 外文会议>International Symposium on Electromagnetic Compatibility Proceedings >TIME DOMAIN MEASUREMENT OF VOLTAGE RISE TIME AND CURRENT RISE TIME DUE TO LOW VOLTAGE ESD USING 12GHz EXPERIMENTAL SYSTEM
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TIME DOMAIN MEASUREMENT OF VOLTAGE RISE TIME AND CURRENT RISE TIME DUE TO LOW VOLTAGE ESD USING 12GHz EXPERIMENTAL SYSTEM

机译:使用12GHz实验系统的低电压ESD电压上升时间和电流上升时间的时域测量

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Voltage rise time and current rise time due to small gap discharge as the low voltage ESD was investigated in time domain. The measurement system was improved on the band width from 6GHz to 12GHz using the coaxial electrode system. Also, the sensing system was changed from the coupled transmission lines to an E-field sensor and a H-field sensor. The insertion loss of the experimental system was within about -3dB in frequency range below 12GHz. As a consequence of the experiment using the system, voltage and current rise time of transition duration were shown 32 ps or less. The rise times were changed in configuration of electrodes, source polarity and discharging voltage. Besides, breakdown field was examined to corroborate the very fast transition durations of about 32ps. The breakdown field was very high of about 8×10{sup}7 V/m in low voltage discharging of below 330V.
机译:在时域中研究了低电压ESD,电压上升时间和电流上升时间由于小电压ESD。使用同轴电电极系统,测量系统从6GHz到12GHz的带宽提高。而且,感测系统从耦合的传输线到E场传感器和H场传感器改变。实验系统的插入损耗在12GHz以下的频率范围内的约-3dB内。由于使用使用系统的实验,转换持续时间的电压和电流上升时间显示为32 ps或更小。在电极,源极性和放电电压的配置中改变了上升时间。此外,检查击穿领域以证实约32ps的快速过渡持续时间。在低压放电低于330V的低压放电中,击穿字段大约8×10 {SUP} 7 V / m非常高。

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