Optimization of Ga(In)NAs thin film growth by atomic hydrogen-assisted molecular beam epitaxy

摘要

The effect of growth temperature on the crystal quality and optical properties of Ga(In)NAs films was investigated over a range of 340 ～ 520°C. We found that Ga(In)NAs films fabricated at lower growth temperatures generally result in an improved crystal quality. An XRD linewidth of as low as 45 arcsec was obtained for a 1 μm-thick Ga_(0.94)In_(0.06)N_(0.01)As_(0.99) thin film grown at 380°C. This is ～1/2 of that grown at the conventionally-adopted growth temperature of 480°C. After annealing, an improved optical property represented by a higher PL intensity compared to the conventional growth method (annealed, T_(growth) = 480°C) was also obtained in the 1 μm-thick Ga_(0.94)In_(0.06)N_(0.01)As_(0.99) thin film grown at low temperature of 380°C.