首页> 外文会议>Symposium on Materials and Technologies for Direct Thermal-to-Electric Energy Conversion >Electronic Structure of AgPb_mSbTe_(m+2) Compounds - Implications on Thermoelectric Properties
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Electronic Structure of AgPb_mSbTe_(m+2) Compounds - Implications on Thermoelectric Properties

机译:AGPB_MSBTE_(M + 2)化合物的电子结构 - 对热电性能的影响

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Novel quaternary compounds AgPb_mSbTe_(m+2) (LAST-m) with different m values have been synthesized recently and some of these compounds show promising thermoelectric properties at high temperatures. The two end members of the series, PbTe (m=∞) and AgSbTe_2 (m=0), are also known to be good thermoelectrics. In this paper, we discuss the results of ab initio electronic structure calculations for these two end members and for LAST-2 and LAST-14 to see how the electronic structure near the chemical potential μ evolves with m. Whereas PbTe and LAST-14 are narrow band gap semiconductors, the other two compounds show pseudo-gap structure. Even in the absence of a true gap, the rapidly varying density of states (DOS) near μ may be conducive to large Seebeck coefficient in LAST-2, LAST-14, and AgSbTe_2.
机译:最近已经合成了具有不同M值的新型季铵化合物AGPB_MSBTE_(M + 2)(LAST-M),其中一些化合物在高温下显示有前途的热电性能。该系列的两个端部件PBTE(M =∞)和AGSBTE_2(M = 0)也被称为良好的热电。在本文中,我们讨论了这两个最终成员的AB Initio电子结构计算的结果,以及最后2和最后14,看看如何用M的化学电位μ进化的电子结构。虽然PBTE和Last-14是窄带间隙半导体,但另外两个化合物显示出伪间隙结构。即使在没有真正的间隙的情况下,近μ的状态(DOS)的快速变化的密度也可以有利于最后2,Last-14和Agsbte_2中的大型塞伯克系数。

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