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STUDY ON THE FILLING FRACTION LIMIT OF IMPURITIES IN CoSb_3

机译:COSB_3中杂质填充分数极限的研究

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Complex crystals such as skutterudites have interstitial voids in the lattice that can be filled by various impurity atoms. The filling fraction limit (FFL) for the intrinsic voids in the lattice of CoSb3 is studied by density functional methods. The FFL is shown to be determined not only by the interaction between the impurity and host atoms but also by the formation of secondary phases between the impurity atoms and one of the host atoms. A model is proposed to quantitatively explain the phenomenon. The predicted FFLs for Ca, Sr, Ba, La, Ce, and Yb in CoSb_3 are in excellent agreement with reported experimental data. Detailed analysis reveals the existence of a quantitative relationship between the repulsive interaction of impurity atoms and their charge state. A correlation between the FFL of an impurity atom and its charge state and electronegativity is discovered.
机译:诸如Skutterudites的复合晶体在晶格中具有间质空隙,其可以被各种杂质原子填充。通过密度官能方法研究了COSB3晶格中固有空隙的填充分数极限(FFL)。显示FFL不仅通过杂质和宿主原子之间的相互作用而确定,而且还通过在杂质原子和宿主原子之一之间形成二次相。提出了一种模型来定量解释这种现象。 CO,SR,BA,LA,CE和COSB_3中的预测FFL与报告的实验数据非常一致。详细分析揭示了杂质原子的排斥相互作用与其充电状态之间的定量关系。发现了杂质原子的FFL与其充电状态和电负性之间的相关性。

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