Near Infrared Photoluminescence of NcVSi- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles

摘要

This paper reports optical propertites of negatively charged NcVSi- centers in silicon carbide (a nitrogen substituting for a carbon atom adjacent to a silicon vacancy) whose emission wavlength is 1100-1500 nm at room temperature. High-purity semi-insulating (HPSI) 4H-SiCs are implanted with high energy N ion beams and subsequently thermally annealed to form NcV_(Si) centers. We investigated a wide range of N ion implantation dose using a micro ion beam implantation technique and observed the photoluminescence intensity from the SiC-NV centers. We show that under conditions of heavy implantation, the excitation laser power excites residual defects and their fluorescences intereferes with the emission from the NcVSi- centers. These results allow us to clarify the requirements to optically detect isolated single NcVSi- centers at lightly implanted conditions.