High-Temperature Reliability Analysis of 1200V/100A 4H-SiC Junction Barrier Schottky Diodes

摘要

The high-temperature (up to 200°C) reliability analysis of 1200 V/100 A 4H-SiC JBS under 168 hours of high-temperature storage stress (HTSS), high-temperature reverse bias (HTRB) and high-humidity HTRB (H3TRB) stress test are reported. Results show that, all the statistical distribution of the data consistency is more dispersed after HTSS, HTRB and H3TRB test, which suggests that there are more degradations in the forward voltage and leakage current characteristics of JBS device under high temperature (up to 150°C) stress. The increased reverse leakage currents after HTSS and HTRB stresses at different test temperatures are mainly due to the thermionic emission with the image force barrier height lowering. However, it is not the same phenomenon after HTRB stress. And the stability of V_R under HTRB test is better than the one under HTSS test, which may be due to the migration and accumulation of charge during exposure to HTRB.