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Growth and characterization of Ga_2O_3 nanoribbons and nanosheets

机译:GA_2O_3纳米布尔斯和纳米片的生长和表征

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We have studied on the use of a GaN powders for growing gallium oxide (Ga_2O_3) nanoribbons and nanosheets by the thermal evaporation technique. We used x-ray diffraction, scanning electron microscopy, and transmission electron microscopy to characterize the samples. The results showed that the produced Ga_2O_3 nanomaterials had single crystalline monoclinic structures. The proportion of wider nanoribbons or nanosheets to nanoribbons increased by increasing the growth temperature and by employing the mixture of GaN and ZnO powders.
机译:我们研究了通过热蒸发技术使用用于种植氧化镓(GA_2O_3)纳米杆和纳米片的GaN粉末。我们使用X射线衍射,扫描电子显微镜和透射电子显微镜来表征样品。结果表明,所生产的GA_2O_3纳米材料具有单晶单斜晶体结构。通过增加生长温度并通过使用GaN和ZnO粉末的混合物来增加更广泛的纳米杆或纳米蛋白酶到纳米杆的比例增加。

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