Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

摘要

Silicon-Carbide (SiC) device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon (Si) counterpart, SiC offers a greater possibility for high powered switching applications in extreme environment. In particular, SiC Metal-Oxide-Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing SiC power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.