Optimization of power trench MOSFETs for high efficiency synchronous buck converters.

摘要

Synchronous buck converter might be one of the most widely used and fabricated circuitry in the world for its favorable trade-off on many subjects. However, the ever higher operation frequency has lead to increasing power loss in power switches and imposed new challenge to MOSFET engineering. One promising alternative for the traditionally used trench MOSFET is the shield gate MOSFET. Shield gate MOSFET has superior conduction performance as well as fast switching transient response due to its Reduced Surface Electric Field (RESURF) effect.;Both shield gate MOSFET and conventional MOSFET rated at 40V have been designed and simulated in the second chapter. The outcome shows that shield gate MOSFET has superior performance in almost every respect except for its large output charge. Then new structure for COSS reduction has been introduced in the following section, with decrement of about 50% in QQS-1 being achieved. Finally, another issue that has been tackled with is the shoot through of synchronous buck converter. Equivalent circuit model for shoot through analysis is built in this section to study the effect of each parasitic element. And a p type pillar added structure has been verified as an effective way to suppress shoot through gate bounce.