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High Thermally Conductive and High Reliability Under-fill

机译:填充高导热和高可靠性

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摘要

The microelectronics packages are becoming smaller and thinner. Flip-chip technology is widely used in microelectronics package. Flip-chip package are progressing with multi functions in one chip. In this case, heat of the package becomes bigger. Flip-chip packages inside mobile phones and PDAs are in tight spaces and these devices are very thin. Therefore, it is difficult to make the heat sink. High thermally conductive under-fill material is effective to solve the heat dissipation issues removing heat to the substrate. Novel under-fill has to protect the package not only from the environment but also from heat. Until recently, silica filled under-fill was used for flip-chip applications, but it is not a good thermal conductor, since silica dose not have good thermal conductivity. Thermal conductivity of under-fill contains silica filler is around 0.4W/mK, so we chose an aluminum nitride as a filling material. But, conventional aluminum nitride particle could not be adapted for flip-chip packages since it's filler size was too large, therefore it is difficult to flow by capillary force. The various kinds of aluminum nitride were examined. High thermally conductive under-fill has been developed. It is filled with fine particle size aluminum nitride which will provide high thermal conductivity and good fluidity. And this under-fill realized over 2W/mK of thermal conductivity by control of loading level of the aluminum nitride filler. Also, this product satisfies the basic requirements for the under-fill, such as the JEDEC level 3 preconditioning test and temperature cycle test. The miniaturization of Flip-chip package is examined in many manufacturers. A thermal conductivity of underfill material has been regarded as important. Silica is contained in conventional under-fill as filler. Thermal conductivity of under-fill which contains silica filler is around 0.4W/mK. More than 1W/mK of thermal conductivity is required for high thermally conductive under-fill. However, it is difficult to confirm if thermal conductivities are more than 1W/mK when silica is chosen as filler, since thermal conductivity of silica is about 1.3W/mK. We chose an aluminum nitride as a filling material. When we chose aluminum nitride as filler, various evils happen. We overcame the evil this time and developed high thermally conductive and high reliability under-fill material. We report it about process of development.
机译:微电子包装越来越薄。倒装芯片技术广泛用于微电子包装。倒装芯片封装在一个芯片中具有多功能的进展。在这种情况下,包装的热量变得更大。手机和PDA内的倒装芯片封装在紧凑的空间中,这些设备非常薄。因此,难以制作散热器。高导热填充材料是有效解决除去热量的散热问题。新颖的下填充必须保护包裹不仅可以保护包裹,而且来自加热。直到最近,二氧化硅填充填充填充物用于倒装芯片应用,但它不是良好的导热体,因为二氧化硅剂量没有良好的导热率。填充含量的热导率含有二氧化硅填料约为0.4W / mK,因此我们选择氮化铝作为填充材料。但是,传统的氮化铝颗粒不能适用于倒装芯片封装,因为它的填充尺寸太大,因此难以通过毛细力流动。检查各种氮化铝。已经开发出高导热填充。它充满了细粒尺寸的氮化铝,其将提供高导热率和良好的流动性。通过控制氮化铝填料的装载水平,该填充物实现了超过2W / MK的导热率。此外,本产品满足填充填充的基本要求,例如JEDEC 3级预处理测试和温度循环试验。在许多制造商中检查了倒装芯片封装的小型化。底部填充材料的导热率被认为是重要的。二氧化硅含有常规填充物作为填料。含有二氧化硅填料的填充填充的热导率约为0.4W / mK。高导热填充需要超过1W / mk的导热率。 However, it is difficult to confirm if thermal conductivities are more than 1W/mK when silica is chosen as filler, since thermal conductivity of silica is about 1.3W/mK.我们选择氮化铝作为填充材料。当我们选择氮化铝作为填料时,各种邪恶发生。我们克服邪恶这次并开发出高导热和高可靠性填充材料。我们向发展过程报告。

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