Production of Cu Nanodots by Ion Sputtering Cu on Mechanically Polished (110) Si-Substrates

摘要

We report on a new method for the production of Cu nanocrystals by 5kV Ar~+ ion sputtering of Cu metallic ribbons at glancing incidence, on top of (110) Si-substrates. The size, shape, crystal structure, in-plane distribution, and concentration of the nanocrystals have been analysed by standard, high resolution, and scanning transmission electron microscopy. The Si-substrate surface topography induced by mechanical polishing favoured the formation of the Cu nanodots. The best results were obtained in (110) Si-substrates polished down to a 0.3 μm finish. The nanocrystals distribution was partially ordered, the nanodots were aligned along the scratch line pattern induced by the mechanical polishing.