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Comparison of Three Region Multiple Gate Nanoscale Structures for Reduced Short Channel Effects and High Device Reliability

机译:三个区域多栅极纳米级结构的比较减少短沟道效应和高装置可靠性

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New structures which have three gate materials in the gate region and an asymmetric or symmetric stack in the oxide region have been modeled. The 2-D model for surface potential and electric field distribution for the channel region has been derived, using universal depletion width boundary conditions. Comparison of various parameters of previously proposed models with the new structures is carried out. Verification of the new three region model is done by using simulator: ATLAS. A unified model for already existent MOSFETs is provided in addition to the new proposed structure for reduced short channel effects and high device reliability.
机译:在栅极区域中具有三个栅极材料的新结构以及氧化物区域中的不对称或对称堆叠已经建模。使用通用耗尽宽度边界条件导出了用于沟道区域的表面电位和电场分布的2-D模型。进行了先前提出模型的各种参数与新结构的比较。通过使用模拟器来完成新的三个区域模型的验证:Atlas。除了用于减少短信效应和高设备可靠性的新的建议结构之外,还提供了用于已经存在MOSFET的统一模型。

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