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Local and Global Magnetic properties of Zn{sub}(1-x)Co{sub}xO, ZnCo{sub}2O{sub}4 and Mn-doped GaAs thin films

机译:Zn {sub}(1-x)Co {sub} xo,znco {sub} 2o {sub} 4和Mn} 4和Mn掺杂Gaas薄膜的局部和全局磁性

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Ferromagnetic semiconductors are compounds of great technological interest due to possibility of combining their charge and spin degrees of freedom when producing electronic devices. We report studies of magnetic susceptibility and Electron Spin Resonance (ESR) in different classes of ferromagnetic thin films. Amorphous and crystalline thin films of Mn-doped GaAs and GaN were studied for different Mn concentrations (0.5-10%) and for hydrogenated films with the same Mn concentrations. Also, thin films of Zn{sub}(1-x)Co{sub}xO(x=0.03,0.05,0.10,0.15,0.20) and ZnCo{sub}2O{sub}4 were investigated by these techniques. The films have been deposited using pulsed laser deposition on c-axis (0001) oriented Al{sub}2O{sub}3 substrates.
机译:铁磁半导体是技术利益的良好化合物,因为在生产电子设备时的电荷和自旋自由度的可能性可能性。我们在不同类铁磁薄膜中报告了磁敏感和电子自旋共振(ESR)的研究。研究了Mn掺杂GaAs和GaN的非晶和结晶薄膜,用于不同的Mn浓度(0.5-10%)和具有相同Mn浓度的氢化膜。此外,通过这些技术研究了Zn {sub}(1-x)(1-x)Co {sub} xo(x = 0.03,0.05,0.10,0.0.0.15,0.20)和znco {sub} 2的薄膜。通过在C轴上的脉冲激光沉积上沉积薄膜(0001)的Al {Sub} 2O} 3基板。

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