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XMCD study of Mn-Ir/Co-Fe bilayers with giant exchange anisotropy

机译:巨型交换各向异性的Mn-Ir / Co-Fe双层XMCD研究

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Exchange anisotropy is one of indispensable physical phenomena to realize recent high density magnetic storage devices. In order to understand the mechanism of exchange anisotropy in terms of spin structure, studies by means of X-ray magnetic circular dichroism (XMCD) are nowadays done for ferromagnetic (FM)/ antiferromagnetic (AFM) bilayer systems. The XMCD can detect uncompensated spins of AFM, and makes it possible to know the magnetization process of AFM layer. Ohldag et al. reported the correlation between exchange bias and pinned interfacial AFM spins through the XMCD studies for several exchange biased bilayer systems[1]. They concluded that the observed exchange anisotropy energy, J{sub}K, is dominated by the ideal interfacial coupling energy, J, between the FM and the AFM layers. The experimental fact, they found and deduced the above conclusion from, is that the pinned interfacial spins is always 4% of the interface layer, regardless of the exchange bias strength. It thus examines their thesis to compare the vertical offset of hysteresis loop of uncompensated AFM spins, which corresponds to the pinned interfacial spins, for the bilayer systems having same J and different J{sub}K. From this viewpoint, Mn{sub}75Ir{sub}25/Co-Fe bilayer is a favorable system, because its J{sub}K remarkably enhances to be a giant value exceeding 1erg/cm{sup}2 with promoting chemical ordering of Mn and Ir atoms[2]. But the J will remain constant against the enhancement of J{sub}K, since the atomic ordering of Mn and Ir does not change the chemical composition at the interface. In the present study, we therefore measured element specific magnetic hysteresis (ESMH) loops for Mn-Ir/Co-Fe bilayers with different chemical ordering of Mn-Ir layer by XMCD technique.
机译:交换各向异性是不可缺少的物理现象,实现最近的高密度磁存储设备之一。为了理解交换各向异性的自旋结构方面的机制,通过X射线磁圆二色性(XMCD)来研究用于铁磁(FM)现今完成/反铁磁(AFM)双层系统。所述XMCD可以检测AFM的未补偿自旋,并使得有可能知道AFM层的磁化过程。 Ohldag等。报道交换偏置和被钉扎界面AFM之间的相关性通过XMCD研究纺纱为几个交换偏置双层系统[1]。他们的结论是所观察到的交换各向异性能,J {子} K,由理想的界面耦合能量,J中,FM和AFM层之间支配。实验事实,发现并推导出从上面的结论是,被钉扎界面自旋是界面层的总的4%,而不管交换偏置的强度。因此它检查他们的论文,比较垂直未补偿AFM自旋的磁滞回线,偏移对应于被钉扎界面自旋,对于具有相同J和不同Ĵ{子} K和双层系统。从这个观点出发,锰{子} 75Ir {子} 25 /钴 - 铁双层是有利的系统,因为它的Ĵ{子} K和显着地提高成为一个巨大的值超过1erg /厘米{SUP} 2与促进的化学排序的Mn和Ir原子[2]。但歼将保持对Ĵ{子} K的增强恒定,由于Mn和Ir的原子有序不会在界面改变的化学成分。在本研究中,我们因此测定的Mn-IR /钴 - 铁双层与由XMCD技术的Mn-IR层的不同的化学排序元件具体磁滞(ESMH)环路。

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