The conventional magnetization switching in a magnetic device is by the magnetic field from an external current wire. The size reduction of a device down to nanoscale causes an increase in the switching field, resulting in disadvantageously high energy consumption. An alternative magnetization switching induced by spin polarized current predicted by Slonczewski and Berger [1-2] has been confirmed by experiments [3]. The domain wall (DW) motion via the spin-polarized current has been performed [4-5]. The current-induced DW motion has recently demonstrated in spin valve structure [6]. Here, we reported on current-induced DW movement in synthetic spin valves. The high exchanged field in synthetic antiferromagnets (SAF) keeps the magentization of the pinned layer unchanged during the measurement. Thus, the GMR measurement allows to an accurate determination of the DW position and displacement.
展开▼
