Spin-controllable electronic devices have received considerable interest because of non-volatile memory property. Special interest is recently focused on current-induced magnetization switching (CIMS) device, where a spin-polarized current affects the magnetic state of a ferromagnetically ordered (FM) conductor via the transfer of angular momentum between the carrier spin and the conductor's magnetic moment [1]. Experimental evidence of spin-transfer effect was reported in Co pillar magnet [2]. We have prepared two kinds of Co thin film nanomagnets with multi-domain and single-domain in the structure of IrMn (8nm)/Co (11nm)/Cu (2nm)/Co (2nm)/Cu (2nm)/Au (5nm)/Cu (100nm) and have studied the resistance change by the magnetic field and electric current.
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