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Effect of Lead Content and B-site Substitutions on Dielectric and Piezoelectric Properties of PZT Ceramics

机译:铅含量和B位取代对PZT陶瓷介电和压电性能的影响

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The behaviour of the dielectric and piezoelectric properties of doped PZT ceramics, with variable lead content, has been investigated from -50°C to room temperature. The PZT materials were prepared by the oxide technique and samples were sintered as pellets, at various temperatures. Niobium and lithium ions have been substituted for Ti{sup}(4+), Zr{sup}(4+) in the PZT matrix, and a small amount of Bi{sub}2O{sub}3 was added to cause A-position vacancies. The lead content in the four materials prepared varies in a narrow range, from 0.97 to 1.029 lead atoms, while the concentration of all other components are maintained constant. The microstructure of samples, evaluated by SEM technique and XRD analysis evidenced the presence of the tetragonal phase characteristic for the PZT 52/48. The dielectric and piezoelectric constants measured on poled samples depends on the sintering temperature, defects and domain walls, lead content.
机译:将掺杂PZT陶瓷的介质和压电性能具有可变铅含量的介质和压电性能,从-50℃下研究到室温。通过氧化物技术制备PZT材料,并在各种温度下作为颗粒烧结样品。在PZT矩阵中已经取代了铌和锂离子在PZT矩阵中取代了Ti {sup}(4 +),Zr {sup}(4+),并加入了少量的Bi {sub} 3以引起a-位置职位空缺。制备的四种材料中的铅含量在窄范围内变化,从0.97-1.029铅原子,而所有其他组分的浓度保持恒定。通过SEM技术和XRD分析评估的样品的微观结构证明了PZT 52/48的四方相位特征的存在。在抛光样品上测量的电介质和压电常数取决于烧结温度,缺陷和畴壁,铅含量。

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