Presented in this work experiments are a part of a broader study that examines the possibility of fabrication of pedestal oxynitride layers for high-K gate stacks by nitrogen implantation from r.f. plasma. The aim of this work was to study the influence of type of nitrogen gas source of nitrogen, r.f. power, temperature and implantation time on the oxynitride layer properties. The obtained layers were characterized by means of ellipsometry, XPS and SIMS. In order to obtain dielectric layers suitable for electrical characterization methods, the plasma nitridation was followed by plasma oxidation process. The results of electrical characterization of test structures fabricated with investigated layers used as gate dielectric, are also discussed.
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