OPTICAL EMISSION BEHAVIOR OF Si QUANTUM DOTS

摘要

Silicon plays a dominant role in microelectronics. Si nanostructures are intensively investigated because of their compatibility with Si technology. In the present work, we report on the optical emission properties of Si quantum dots. The energy states are calculated within the effective mass approximation. Both first and second order transitions are included in the calculation. The sizes of the quantum dots that we have considered are in the range 2-5 nm. The magnitude of the lifetime is found to be very sensitive to the structural parameters of the dots such as the shape, the cross section and the crystallographic direction. Lifetimes varying from the order of /isec to the order of msec have been obtained. The results of our calculations provide further insight in the photoluminescence behavior of Si nanostructures and porous Si.