A stable field electron emission was obtained from Ge nanocluster struc-tures grown on Si(100) by molecular-beam epitaxy. The size of the clus-ters was <10 nm and cluster density was ~10ll) cm"2. The emission current-voltage characteristics showed current peaks, presumably due to resonance electron tunneling via the energy levels of the nanoclus-ter potential well. For Ge cluster multilayers embedded in Si, the field emission current showed a considerable temperature sensitivity, as well as photosensitivity in the wavelength range from 0.4 to 10 μm.
展开▼
