RADICAL BEAM QUASIEPITAXY TECHNOLOGY FOR FABRICATION OF WIDE- GAP SEMICONDUCTORS ON INSULATOR

摘要

Current work presents a new method -Radical Beam Quasiepitaxy (RBQE) --of forming monocrystalline layers of ZnO and ZnS on basic crystals of ZnO or ZnS. Basic crystals were stoichiometric insulating samples with minimal concentration of residual impurities. Studies were made of the electrical and optical properties of grown layers as well as basic crystals, i.e. Photoconductivity (PC), Photoluminescence (PL), Thermo-electromotive force (EMF) and Hall Effect. In PL spectra of 10~(11) - 10~(13) Ωcm resistivity ZnO newly grown layers obtained at 650 K free A, B, C excitons emission and polariton emission have been observed. After removing the grown layers, surface layers of the basic crystals always demonstrated p-type conductivity. Defects responsible for the observed peaks in the PL spectra are identified.