ACHIEVEMENT OF SiGe-ON-INSULATOR TECHNOLOGY

摘要

Fabrication technologies of SiGe-OI substrate, using SIMOX, bonding and growth of SiGe on top of Si-OI, are described. Attention was paid to the mechanism how SiGe-OI develops, and how the Ge concentration ceiling can be lifted. It is also indicated the achieved level of lattice relaxation and dislocation density of the SiGe layer in SiGe-OI. Remaining issues, which would be solved in order to develop devices based on SiGe-OI, are pointed out.