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High temperature bending strength and fracture energies of the tape-cast silicon nitride with beta-si_3n_4 seed addition

机译:用β-Si_3N_4种子添加胶带铸型氮化硅的高温弯曲强度和断裂能量

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High temperature bending strength and fracture energies of a tape-cast silicon nitride with and without rod-like beta-Si_3N_4 seed addition were measured.The experiment results showed that Lu_2O_3-SiO_2 additives were useful to improve the high temperature bending strength.This was attributable to the formation of a higher melting point grain boundary phase,which was extensively crystallized during sintering.Since the seeded and tape-cast silicon nitride has an anisotropic microstructure,where the elongated grains grown from seeds were preferentially oriented parallel to the casting direction.The strength and fracture energies of the Si_3N_4 were strongly dependent on the tape casting direction.When a stress was applied along with the grain alignment,the bending strength of the samples parallel to tape casting direction measured at 1500 deg C was 738 MPa,which was almost the same as the room temperature bending strength 739 MPa,and the fracture energy of the seeded and tape-cast Si_3N_4 was improved from 301 J/m~2 at room temperature to 781 J/m~2 at 1500 deg C.The large high temperature bending strength and fracture energies were attributable primarily to the aligned fibrous Si_3N_4 grains and sintering additives.
机译:高温弯曲延成型氮化硅的强度和断裂能量使用和不使用棒状的β-Si_3N_4种子除了分别measured.The实验结果表明,Lu_2O_3-SiO_2添加剂是改善高温弯曲strength.This可归因有用为了形成较高的熔点晶界相,其在烧结期间广泛地结晶。种子和胶束氮化硅具有各向异性微观结构,其中从种子生长的细长晶粒优先与铸造方向平行定向。所述Si_3N_4的强度和断裂能量分别为强烈依赖带铸造direction.When与晶对准沿着施加的应力上,平行于在1500测量摄氏度带铸造方向样品的弯曲强度为738兆帕,这是几乎与室温弯曲强度相同的739MPa,以及磨料和胶带铸造Si_3N_的断裂能量4在室温下从301J / m〜2改善为781J / m〜2,在1500℃下为781J / m〜2。大的高温弯曲强度和断裂能量主要是归因于对齐的纤维Si_3N_4谷物和烧结添加剂。

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