The effect of substrate temperature and interface oxide layer on aluminum induced crystallization (AIC) of amorphous silicon (a-Si) is investigated. The effect of substrate temperature on the AIC process was studied by changing the deposition temperate of a-Si from 200 to 300 °C in a Al/a-Si/glass configuration. To study the effect of interface oxide on AIC, samples with a-Si/Al/glass, a-Si/Al-oxide/Al/glass, and Al/Si-oxide/a-Si/glass configurations were prepared at a Fixed substrate temperature. The samples were annealed in the temperature range from 300 °C to 525 °C for different periods of time. The X-ray diffraction (XRD) patterns confirmed the crystallization of the a-Si films in the various configurations. From the analysis, we report that crystallization of a-Si happen at 350 °C annealing temperature in the Al/a-Si/glass configuration. However, with or without the presence of Si-oxide at the interface, crystallization saturated alter annealing for 20 minutes at 400 °C. On the other hand, when Al-oxide is present at the interface, higher annealing temperatures and longer annealing times are required to saturate the crystallization of a-Si. Environmental Scanning Electron Microscope (ESEM) and Energy Dispersive X-Ray (EDX) mapping were used to study the surface morphology as well as the layer sequence after crystallization. This analysis revealed that Si-Al layer-exchange happens regardless of the deposited film configuration.
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机译:研究了衬底温度和邻接氧化物层对无定形硅(A-Si)的铝诱导结晶(AIC)的影响。通过在AL / A-Si /玻璃构造中改变A-Si的沉积温度,研究了衬底温度对AIC工艺的影响。为了研究互联网氧化物对AIC的影响,在固定的情况下制备用A-Si / Al /玻璃,A-Si / Al氧化物/ Al / Al /玻璃和Al / Si-氧化物/ A-Si /玻璃构造的样品。衬底温度。将样品在温度范围内从300℃至525℃的温度下进行,以进行不同的时间段。 X射线衍射(XRD)图案证实了在各种配置中的A-Si膜的结晶。从分析中,我们报告了A-Si /玻璃构型的350°C退火温度在350°C的退火温度下发生结晶。然而,在界面处或不存在Si-氧化物的情况下,结晶饱和改变在400℃下的20分钟20分钟。另一方面,当在界面处存在Al氧化物时,需要更高的退火温度和更长的退火时间来使A-Si的结晶饱和。环境扫描电子显微镜(ESEM)和能量分散X射线(EDX)映射用于研究结晶后的表面形态以及层序列。该分析表明,无论沉积的膜配置如何,都会发生Si-Al层交换。
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