MODELING AND CHARACTERIZATION OF GaN p-i-n PHOTODIODES

摘要

This paper reports temperature-dependent DC and RF characteristics of a 0.4-mm-radius sapphire-based GaN p-i-n diode between -60 and 175°C. Deep levels approximately 1 eV below the conduction band were observed in both photo-conductance and photo-capacitance measurements. Self-heating effects were also observed and modeled with the measured thermal resistance and time constant. Based on these characteristics, an equivalent-circuit model was constructed, which accurately predicted the temperature-dependent DC and RF characteristics of the diode.