Microstructure of SiC / TiAl Interface Formed by Solid-State Diffusion Bonding

摘要

The microstructure of the solid-state diffusion bonded interfaces of silicon carbide (SiC) and titanium aluminide (TiAl) were investigated. A 100-μm-thick Ti-48at%Al foil was inserted between two SiC specimens and then heat-treated in vacuum. The interfacial microstructure has been analyzed by scanning electron microscopy, electron probe microanalysis and X-ray diffractometry. Four layers of reaction products are formed at the interface by diffusion bonding: a layer of TiC adjacent to SiC followed by a diphase layer of TiC+Ti_2AlC, a layer of Ti_5Si_3Cx containing Ti_2AlC particles and a layer of TiAl_2. However, the TiAl_2 layer is formed during cooling. The actual phase sequence at the bonding temperatures of 1573 K and 1673 K are described as SiC/TiC/(TiC+ Ti_2AlC)/(Ti_5Si_3Cx+Ti_2AlC)/Ti_(1-x)Al_(1+X)/TiAl and SiC/TiC/(TiC+Ti_2AlC)/(Ti_5Si_3C_X+Ti_2AlC)/Ti_5Al_(11) /Ti_(1-X)Al_(1+X)/TiAl, respectively. The phase sequences are successfully expressed on the basis of the Ti-Al-Si-C quaternary chemical potential diagram.