First demonstration of 10 microns FPAs in InAs/GaSb Superlattices

摘要

As an emerging infrared material, the InAs/GaSb superlattices have received more and more interest nearly 30 years after its initial conception in the 1970s. Experimental work on photon detectors using this material has a history of less than 10 years. After intensive research and with cutting edge molecular beam epitaxy (MBE) cell designs, high quality superlattice material growth becomes a reality. The most important figure of merit for developing the focal plane arrays (FPAs), the R{sub}0A value, has been continuously increased in the past few years. At state of the art, the material quality has been improved to a level that imaging FPAs become a possibility. Due to high flexibility in the material design, the room left for improvement is unknown.