A Study of Figures of Merit for High Frequency Behavior of MOSFETs in RF IC Applications

摘要

This paper is to review important device parameters as the figures of merit (FOM) to understand the device characteristics for analog/RF applications. These FOM should be characterized and evaluated in technology development and model generation for analog/RF technologies. This paper has tried to show these FOM with both measured data and model simulation to help both technology developers and modelers in developing high performance advanced processes and generating high quality accurate models. Device models generated with validations based on these FOM will greatly help circuit designers in designing robust and high performance analog/RF IC circuits.