首页> 外文会议>Pacific Rim Conference on Lasers and ELectro-Optics >Improvement in light-output efficiency of Near-Ultraviolet InGaN-GaN LEDs Fabricated on Stripe Patterned Sapphire Substrate
【24h】

Improvement in light-output efficiency of Near-Ultraviolet InGaN-GaN LEDs Fabricated on Stripe Patterned Sapphire Substrate

机译:条纹图案化蓝宝石衬底上制造的近紫外线Ingan-GaN LED的显着效率提高

获取原文

摘要

The output power of GaN-based near ultraviolet stripe patterned sapphire substrate (PSS) LEDs was 20% higher than that of the conventional LEDs. The possible mechanism of this enhancement will be discussed in this report.
机译:基于GaN的紫外线条纹图案化的蓝宝石衬底(PSS)LED的输出功率比传统LED高出20%。本报告将讨论这种增强的可能机制。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号