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Crystalline quality improvement of In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As heterostructure on InAlAs/InGaAlAs/GaAs metamorphic buffer by post-growth rapid thermal annealing

机译：中/亚/亚/普/亚/亚/亚/亚/亚/亚/亚/亚/亚/亚/亚/亚/亚/亚0.47 /作为INALAS / INGAALAS / GAAs变质缓冲液的异质性质，通过后生长快速热退火

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Effects of post-growth rapid thermal annealing (RTA) on optical and structural properties of an In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As multi-quantum-well (MQW) structure on a GaAs substrate by using an InAlAs/InGaAlAs metamorphic buffer were investigated. Photoluminescence spectrum and triple-axis (004) contour maps showed improvement in crystalline quality of the metamorphic MQW structure through the post-growth RTA.

机译：后生长后的效果快速热退火（RTA）对/亚/亚/亚/亚/亚/亚/亚/亚/亚/亚/亚/亚/亚/亚/亚/亚/亚/亚/亚/亚/亚/苏0.47 /作为多量子阱（MQW）结构的光学和结构性能通过使用Inalas / Ingaalas变质缓冲液在GaAs底物上进行了研究。光致发光光谱和三轴（004）轮廓图显示通过生长后变质MQW结构的晶体质量的改善。

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《International Conference on Indium Phosphide and Related Material》|2005年||共3页
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作者
Soo-Ghang Ihn; Seong-June Jo; Kyoung-Hwan Oh; Tae-Woo Kim; Jong-In Song;
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中图分类 TN248.4-53;
关键词
III-V semiconductors; aluminium compounds; buffer layers; gallium arsenide; indium compounds; optical properties; photoluminescence; rapid thermal annealing; semiconductor heterojunctions; semiconductor quantum wells; GaAs substrate; In/sub 0.52/Al/sub 0.48/As-In/s;

机译：III-V半导体;铝化合物;缓冲层;砷化镓;铟化合物;光学性质;光致发光;快速热退火;半导体杂交;半导体量子阱;GaAs衬底;在/ sub 0.52 / al / sub 0.48 / she-in / S.;

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1. Effects of rapid thermal annealing on quality of In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As multiquantum wells grown on a compositionally graded InAlAs/InAlGaAs metamorphic buffer layer [J] . Soo-Ghang Ihn, Seong-June Jo, Jong-In Song Applied Physics Letters . 2004,第26期

机译：快速热退火对在成分渐变的InAlAs / InAlGaAs变质缓冲层上生长的In_（0.52）Al_（0.48）As / In_（0.53）Ga_（0.47）As多量子阱质量的影响
2. Thermal characteristics of InP, InAlAs, and AlGaAsSb metamorphic buffer layers used in In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As heterojunction bipolar transistors grown on GaAs substrates [J] . Y.M.Kim, M.J.W.Rodwell, A.C.Gossard Journal of Electronic Materials . 2002,第3期

机译：在GaAs衬底上生长的In_（0.52）Al_（0.48）As / In_（0.53）Ga_（0.47）As异质结双极晶体管中使用的InP，InAlAs和AlGaAsSb变质缓冲层的热特性
3. Effects of postgrowth rapid thermal annealing on InAlAs/InGaAs metamorphic high-electron-mobility transistor grown on a compositionally graded InAlAs/InGaAlAs buffer [J] . Soo-Ghang Ihn, Seong-June Jo, Jong-In Song Applied Physics Letters . 2005,第4期

机译：生长后快速热退火对成分梯度InAlAs / InGaAlAs缓冲层上生长的InAlAs / InGaAs变质高电子迁移率晶体管的影响
4. Crystalline quality improvement of In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As heterostructure on InAlAs/InGaAlAs/GaAs metamorphic buffer by post-growth rapid thermal annealing [C] . Soo-Ghang Ihn, Seong-June Jo, Kyoung-Hwan Oh, Indium Phosphide and Related Materials, 2005. International Conference on . 2005

机译：生长后快速热退火提高InAlsub / InGaAlAs / GaAs变质缓冲层上In / sub 0.52 / Al / sub 0.48 / As / In / sub 0.53 / Ga / sub 0.47 / As异质结构的晶体质量
5. Investigation of the Effects of Rapid Thermal Annealing on MBE Grown GaAsBi/GaAs Heterostructures for Optoelectronic Devices. [D] . Grant, Perry C. 2013

机译：快速热退火对MBE生长的光电器件GaAsBi / GaAs异质结构影响的研究。
6. Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers [O] . Piotr Gutowski, Iwona Sankowska, Tomasz Słupiński, 2019

机译：InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
7. Effect of an InP/In0.53Ga0.47As interface on spin-orbit interaction in In0.52Al0.48As/In0.53Ga0.47As heterostructures [O] . Lin YP 2011

机译：InP / In0.53Ga0.47As界面对In0.52Al0.48As / In0.53Ga0.47As异质结构中自旋轨道相互作用的影响
8. Low Frequency and Microwave Characterization of Submicron-Gate In(0.52)Al(0.48)As/In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As Heterojunction Metal-Semiconductor Field-Effect Transistors Grown by Molecular-Beam Epitaxy. [R] . Eastman, L. F., Kuang, J. B., Tasker, P. J., 1989

机译：亚微米栅极In（0.52）al（0.48）as / In（0.53）Ga（0.47）as / In（0.52）al（0.48）的低频和微波表征作为分子生长的异质结金属半导体场效应晶体管光束外延。

Crystalline quality improvement of In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As heterostructure on InAlAs/InGaAlAs/GaAs metamorphic buffer by post-growth rapid thermal annealing

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