(001), (1110), (105)/(015), and (100)/(010)-oriented SrBi_4Ti_4O_(15)(SBTi) films with various film thickness were grown by MOCVD. Dielectric constant degraded with decreasing film thickness except (001)-oriented films. Moreover, the critical thickness for the drop of the dielectric constant decreased with decreasing tilting angle of the c-axis of the films from surface normal. These result clearly indicate that the thickness-dependence -free characteristics of the (001)-, c-axis, -oriented SBTi films originates in the stack structure of the bismuth oxides and the psudoperovskite layers.
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